Semiconductor device having reverse conductivity-type diffusion

Details Semiconductor device having reverse conductivity-type diffusion Semiconductor device having reverse conductivity-type diffusion

1990-10-03

1992-03-24

James, Andrew J.

357 52, 357 59, 357 65, 357 68, H01L 2348, H01L 2934, H01L 2904, H01L 2940

Patent

active

050993089

ABSTRACT:
A semiconductor device comprising one conductivity type semiconductor substrate, a reverse conductivity type diffusion layer, a semiconductor wiring layer and a metal connection wiring layer, and said metal connection wiring layer is composed of a high melting metal film formed by a selective CVD method.

REFERENCES:
patent: 4121240 (1978-10-01), Katto
patent: 4712291 (1987-12-01), McLevige
patent: 4903096 (1990-02-01), Masuoka et al.
patent: 4954871 (1990-09-01), Mizutani et al.

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