Semiconductor device with insulating isolation groove

Details Semiconductor device with insulating isolation groove Semiconductor device with insulating isolation groove

1989-12-08

1992-03-24

Hille, Rolf

Fishing, trapping, and vermin destroying

357 47, 357 50, 357 55, 437 67, H01L 2712

Patent

active

050993046

ABSTRACT:
A semiconductor device comprising an insulating isolation groove which comprises a groove in a substrate, an insulating film on the inner surface of the groove, a polycrystal silicon film and a boron phosphosilicate glass film in order embedded within the groove, and a silicon oxide film on the boron phosphosilicate glass film.
Since the polycrystal silicon film and boron phosphosilicate glass film are embedded within the groove, the crystal defect due to thermal expansion does not occur. And, since it is not necessary to oxidize the surface of the polycrystal silicon film within the groove, deformation due to an increased build-up at the time of oxidation does not occur.

REFERENCES:
patent: 4404735 (1983-09-01), Sakurai
patent: 4471525 (1984-09-01), Sasaki
patent: 4621414 (1986-11-01), Iranmanesh
patent: 4740480 (1988-04-01), Ooka
patent: 4810669 (1989-03-01), Kobayashi
patent: 4819054 (1989-04-01), Kawaji et al.
patent: 4835115 (1989-05-01), Eklund
patent: 4855804 (1989-08-01), Bergami et al.
patent: 4888300 (1989-12-01), Burton

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