Modulation doped base heterojunction bipolar transistor

Details Modulation doped base heterojunction bipolar transistor Modulation doped base heterojunction bipolar transistor

1990-06-15

1992-03-24

Prenty, Mark

357 16, 357 58, H01L 2972, H01L 29161, H01L 2912

Patent

active

050992996

ABSTRACT:
A modulation doped base heterojunction bipolar transistor wherein the base is a modulation doped heterojunction formed of a layer of p wide gap semiconductor material and a layer of I narrow gap semiconductor material. The collector/base is formed with n+ narrow gap semiconductor material adjacent to the I region of the base. The emitter is n+ wide gap semiconductor material adjacent to the p wide gap layer of the base. The doping concentration and width of the p region of the base is such that all holes are depleted in that region, and a p type inversion layer is formed in the I narrow gap material at its interface with the p wide gap material. This structure provides a modulation doped base heterojunction bipolar transistor which exhibits low base resistance, enhanced performance at low temperatures, a built-in drift field, a reduced emitter injection barrier, no minority carrier storage effects in the base region, and a built-in hot electron effect.

REFERENCES:
patent: 4825269 (1989-04-01), Plummer et al.

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