Semiconductor device with thin insulation film

Details Semiconductor device with thin insulation film Semiconductor device with thin insulation film

1990-08-13

1991-03-19

Hille, Rolf

357 54, 357 59, 357 51, H01L 2968, H01L 2934, H01L 2904, H01L 2702

Patent

active

050015273

ABSTRACT:
In the step of forming a thin insulation film with the thickness of less than 1,000 .ANG. on the polycide electrode and wiring after formiung the polycide electrode and wiring, a semiconductor device having preferable insulation performance and high reliability is formed by using a silicon oxide film (SiO.sub.2) formed by a chemical vapor deposition process using a dichlorosilane (SiH.sub.2 Cl.sub.2) gas and a nitrous oxide (N.sub.2 O) gas under a reduced pressure of from 0.1 mbar to 2 mbar and at a temperature from 700.degree. C. to 950.degree. C. as the insulation film.

REFERENCES:
patent: 4282540 (1981-08-01), Ning et al.
patent: 4288256 (1981-09-01), Ning et al.
patent: 4419385 (1983-12-01), Peters
patent: 4577390 (1986-03-01), Haken
8172 IEEE International Solid-State Circuits Conference, vol. 24 (1981), Feb., New York, U.S.A., pp. 152-153, "Memory Techniques", H. H. Chao et al.
Solid State Technology, Apr. 1977, "Low Pressure CVD Production Processes for Poly, Nitride, and Oxide", pp. 63-70, R. S. Rosler.

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