Fishing – trapping – and vermin destroying
Patent
1994-05-20
1995-11-28
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 60, 437195, 2523131, H01L 2102
Patent
active
054708028
ABSTRACT:
This invention provides a process for making a semiconductor device with reduced capacitance between adjacent conductors. This process can include applying a solution between conductors 24, and then gelling, surface modifying, and drying the solution to form an extremely porous dielectric layer 28. A non-porous dielectric layer 30 may be formed over porous layer 28, which may complete an interlayer dielectric. A novel process for creating the porous dielectric layer is disclosed, which can be completed at vacuum or ambient pressures, yet results in porosity, pore size, and shrinkage of the dielectric during drying comparable to that previously attainable only by drying gels at supercritical pressure.
REFERENCES:
patent: 4652467 (1987-03-01), Brinker et al.
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5023208 (1991-06-01), Pope et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5185037 (1993-02-01), Kaijou
patent: 5275889 (1994-01-01), Yokouchi et al.
patent: 5390073 (1995-02-01), McMillan
patent: 5393712 (1995-02-01), Rostoker et al.
08/055,069, Deshtande et al., Apr. 28, 1993.
08/234,443, Cho, class 257, Apr. 28. 1994.
Cho Chih-Chen
Gnade Bruce E.
Smith Douglas M.
Donaldson Richard L.
Gurley Lynne A.
Hearn Brian E.
Hiller William E.
Stoltz Richard A.
LandOfFree
Method of making a semiconductor device using a low dielectric c does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making a semiconductor device using a low dielectric c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor device using a low dielectric c will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2013548