Fishing – trapping – and vermin destroying
Patent
1993-05-24
1995-11-28
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437200, 437984, H01L 218247
Patent
active
054707722
ABSTRACT:
A process for fabricating contactless electrically programmable and electrically erasable memory cells of the flash contactless EPROM or EEPROM type. The array of memory cells in these devices have elongated, parallel source and drain regions disposed beneath field oxide regions. The word lines are elongated, parallel strips of polysilicon. A series of SiO.sub.2 depositions using TEOS chemistry in a PECVD process, and etches using sputter etch and plasma processes, is performed. After deposition and etchback, the polysilicon word lines remain exposed while all previous exposed substrate regions between source and drain are covered with SiO.sub.2. A metal deposition and silicidation are performed forming a silicide on the exposed silicon word lines thereby lowering the resistance of the word lines. Since the substrate regions between source and drain is covered between SiO.sub.2 prior to metal deposition and silicidation no silicide is formed in these regions. Therefore the word lines are silicidized in a self aligned process with no need for a photolithographic step after SiO.sub.2 deposition.
REFERENCES:
patent: 4635347 (1987-01-01), Lien et al.
patent: 4746219 (1988-05-01), Holloway et al.
patent: 4784971 (1988-11-01), Chiu et al.
patent: 4886765 (1989-12-01), Chen et al.
patent: 4997790 (1991-03-01), Woo et al.
patent: 5051796 (1991-09-01), Gill
patent: 5069747 (1991-12-01), Cathey et al.
patent: 5081056 (1992-01-01), Mazzali et al.
patent: 5089442 (1992-02-01), Ohmer
patent: 5160986 (1992-11-01), Bellezza
Wolf, "Silicon Processing for the VLSI Era", vol. II, pp. 222-224, 1990.
Wolf, "Silicon Processing for the VLSI Era, vol. II: Process Integration", .COPYRGT.Jun./1990 pp. 144-150.
Booth Richard A.
Chaudhuri Olik
Intel Corporation
LandOfFree
Silicidation method for contactless EPROM related devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicidation method for contactless EPROM related devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicidation method for contactless EPROM related devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2013125