Method of manufacturing a floating gate memory device

Details Method of manufacturing a floating gate memory device Method of manufacturing a floating gate memory device

1991-02-21

1995-11-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437978, 437235, 437241, H01L 213215, H01L 218247

Patent

active

054707714

ABSTRACT:
A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.

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