Method of manufacturing a semiconductor device with hydrogen ion

Details Method of manufacturing a semiconductor device with hydrogen ion Method of manufacturing a semiconductor device with hydrogen ion

1994-05-23

1995-11-28

Fourson, George

Fishing, trapping, and vermin destroying

437 60, 437241, 437978, H01L 21265, H01L 2102

Patent

active

054707641

ABSTRACT:
To manufacture a semiconductor device a first insulating oxide film and a second thicker insulating oxide film, which continues to the first insulating oxide film, are formed on a semiconductor substrate. The first and second insulating oxide films are covered by a polysilicon film selectively formed on a patterned nitride layer or formed over the semiconductor substrate. In the second case, a silicon nitride film is formed in the lowermost layer portion of the polysilicon film by implanting nitrogen ions and then applying a heat treatment. The polysilicon and silicon nitride films are patterned for forming first and second polysilicon resistance films on the first and second insulating oxide films, respectively. A first electrode is connected to the first polysilicon resistance film and a second electrode is connected to the second polysilicon resistance film. An insulating protection film formed over the semiconductor substrate covers the first and second polysilicon resistance films and the first and second electrodes.

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