Method of fabricating a thin film transistor

Details Method of fabricating a thin film transistor Method of fabricating a thin film transistor

1992-11-20

1995-11-28

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437228, 437233, 437909, H01L 2100, H01L 21336, H01L 21302

Patent

active

054707625

ABSTRACT:
A thin film transistor and a producing method therefor having a semiconductor layer which is formed in an islandish form and constitutes a channel forming region, a source region and a drain region, wherein the edge portion of the islandish semiconductor layer is so designed as to be gradually or monotonously thinned toward the edge thereof to prevent the gate insulating film covering the active layer from being thinned at the edge portion of the semiconductor layer. The gate insulating film is also smoothly formed to prevent an electric field concentration phenomenon at the edge portion.

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patent: 5153142 (1992-10-01), Hsieh
patent: 5225356 (1993-07-01), Omura et al.
patent: 5314841 (1994-05-01), Brady et al.

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