Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing
Patent
1990-07-16
1992-03-24
Dees, Jose G.
Organic compounds -- part of the class 532-570 series
Organic compounds
Heavy metal containing
556 13, 556 20, 556 70, 556174, C07F 500, C07F 902
Patent
active
050990446
DESCRIPTION:
BRIEF SUMMARY
The invention relates to organometallic compounds which contain aluminum, gallium or indium as metals, and also to the use of said compounds for the production of thin films or epitaxial layers by gas-phase deposition.
The deposition of such layers either from pure elements of the third group or from III-V combinations with other elements, such as for example gallium arsenide, indium phosphide or gallium phosphide, can be used to produce electronic and opto-electronic circuit elements, compound semiconductors and lasers. The deposition of said layers takes place from the gas phase.
The properties of these films depend on the deposition conditions and the chemical composition of the film deposited.
All the known methods such as the Metal-Organic Chemical Vapor Deposition (MOCVD) method, the Photo-Metal-Organic Vapor Phase (Photo-MOVP) method in which the substances are decomposed by UV irradiation, the Laser Chemical Vapor Deposition (Laser CVD) method or the Metal-Organic Magnetron Scattering (MOMS) method, are suitable for deposition from the gas phase. The advantages over other methods are a controllable layer growth, a precise doping control and also simple handling and production-friendliness owing to the normal-pressure or low-pressure conditions.
In the MOCVD method, organometallic compounds are used which decompose to deposit the metal at a temperature below 1100.degree. C. Typical apparatuses which are currently used for MOCVD comprise a "bubbler" having a feed for the organometallic component, a reaction chamber which contains the substrate to be coated, and also a source of a carrier gas, which should be inert toward the organometallic component. The "bubbler" is kept at a constant, relatively low temperature which is preferably above the melting point of the organometallic compound, but far below the decomposition temperature. The reaction chamber or decomposition chamber is preferably at a very much higher temperature which is below 1100.degree. C., at which temperature the organometallic compound completely decomposes and the metal is deposited. The organometallic compound is converted to the vapor state by the carrier gas and is passed through a lock into the decomposition chamber with the carrier gas. The mass flow rate of the vapor can readily be controlled and a controlled growth of the thin layers is consequently also possible.
Hitherto, metal alkyls such as, for example, trimethylgallium, trimethylaluminum or trimethylindium have mainly been used for gas-phase deposition. These compounds are, however, extremely sensitive to air, spontaneously ignitable and partially decomposable even at room temperature. Elaborate safety measures are therefore necessary for the production, the transportation, the storage and the application of these compounds. A few, somewhat more stable adducts of the metal alkyls with Lewis bases such as, for example, trimethylamine and triphenylphosphine are also known (described, for example, in GB 2,123,422, EP-A 108,469 or EP-A 176,537), but these are only suitable to a limited extent for gas-phase deposition owing to the low vapor pressure.
It was therefore the object of the present invention to find metal alkyl compounds which are simple to handle and are stable at room temperature and which can be decomposed from the gas phase, that is to say are suitable for the various methods of gas-phase deposition.
It has now been found that organometallic compounds of aluminum, gallium and indium which are intramolecularly stabilized are outstandingly suitable for gas-phase deposition.
A few intramolecularly stabilized compounds of this type are described, for example, in German Offenlegungsschrift 3,631,469. This application describes, however, novel organometallic compounds having an intramolecular stabilization via a nitrogen, phosphorus, arsenic or antimony atom, or also having an intramolecular stabilization via fluorine atoms. All these intramolecularly stabilized compounds have a high stability toward air and oxygen, and they are therefore simple to handle and are o
REFERENCES:
Chemical Abstracts, vol. 69, No. 7, 12 Aug. 1968, Abs. No. 27472s, Hubert Schmidbaur et al., "Preparative and spectroscopic studies of dialkylgallium fluorides".
Chemical Abstracts, vol. 68, No. 10, 4 Mar. 1988, Abs. No. 44331s, J. Weidlein et al., "Vibrational spectra of dimethyl-and diethylaluminum fluoride".
Erdmann Dietrich
Hostalek Martin
Pohl Ludwig
Dees Jos,e G.
Merck Patent Gesellschaft mit beschrankter Haftung
Nazario Porfirio
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