Method and apparatus for producing crystalline layers

Details Method and apparatus for producing crystalline layers Method and apparatus for producing crystalline layers

1995-01-20

1996-04-02

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

117 56, 117934, 437125, 118406, C30B 1906

Patent

active

055031030

ABSTRACT:
A method for the formation of a layer on at least one substrate. A liquid, which contains the material for forming the layer, flows over the surface of the substrate of the substrate to be coated. A concentration gradient of the layer-forming material is produced in a direction, perpendicular to the direction of the flow of the liquid. As a result, the concentration of the layer-forming material becomes a maximum at one side of the liquid.

REFERENCES:
patent: 3697330 (1972-10-01), Minden et al.
patent: 3713883 (1973-01-01), Lien
Rosztoczy et al, "The Growth of Ge-GaAs and GaP-Si Heterojunctions by Liq Phase Epitaxy", J. Electrochem. Soc: Solid-State Science and Technology Aug. 1972, pp. 1119-1121.

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