Semiconductor device having amorphous carbon fluoride film of lo

Details Semiconductor device having amorphous carbon fluoride film of lo Semiconductor device having amorphous carbon fluoride film of lo

1998-04-01

2000-08-15

Potter, Roy

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257646, H01L 2348

Patent

active

061040924

ABSTRACT:
A metal film with high melting point containing such nitrogen as titanium nitride is disposed on the interface between an amorphous carbon fluoride film and a metal. A structure is obtained from the function of a nitrogen-containing metal film with high melting point which prevents fluorine dispersion, to prevent such problems as the reaction of a metal and fluorine at heating process and the following falling or swelling of the metal film can be solved. In addition, the heating process possible to introduce in the manufacturing steps allow to complete the LSI making process of a practical multilayer wiring structure on the basis of a low dielectric constant of amorphous carbon.

REFERENCES:
patent: 5698901 (1997-12-01), Endo
patent: 5866920 (1999-02-01), Matsumoto et al.
patent: 5985750 (1999-11-01), Oda
H. Nishimura et al., "Reliable Submicron Vias Using Aluminum Alloy High Temperature Sputter Filling", 1991 VMIC Conference, IEEE, Jun. 11-12, 1991, pp. 170-176.

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