Semiconductor device having gate electrode with a sidewall air g

Details Semiconductor device having gate electrode with a sidewall air g Semiconductor device having gate electrode with a sidewall air g

1998-04-14

2000-08-15

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257377, 257382, 257344, 257336, 257404, 257410, H01L 2900, H01L 2976, H01L 2994, H01L 31062

Patent

active

061040770

ABSTRACT:
A semiconductor device having a gate electrode with a sidewall air gap is provided. In accordance with this embodiment, at least one gate electrode is formed over a substrate. A spacer is then formed adjacent an upper sidewall portion of the gate electrode such that an open area is left beneath the spacer. Next, a dielectric layer is formed over the spacer and the gate electrode, thereby leaving an air gap in the open area. In accordance with one aspect of the invention, both the gate electrode and the spacer adjacent the gate electrode are formed from polysilicon. This, for example, allows the formation of a wider contact area to the gate electrode.

REFERENCES:
patent: 3886584 (1975-05-01), Cook, Jr. et al.
patent: 4169000 (1979-09-01), Riseman
patent: 5668398 (1997-09-01), Havemann et al.
patent: 5742363 (1998-04-01), Bae

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