Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1998-12-14

2000-08-15

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438719, 438721, 438738, H01L 2100

Patent

active

061036315

ABSTRACT:
In a semiconductor device manufacturing method, HBr gas (etching gas) is made plasma while the gas pressure thereof is kept to 2 mTorr or less, and ion elements of the plasma are accelerated under bias power of 150 W or more to etch a titanium silicide film 11. Thereafter, HBr gas is further made plasma while the gas pressure thereof is kept to 5 to 10 mTorr, and ion elements of the plasma are accelerated under bias power of 10 to 100 W to etch a polysilicon film 10 with the ion elements in the plasma.

REFERENCES:
patent: 5160407 (1992-11-01), Latchford et al.

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