Patent
1974-05-21
1976-04-27
James, Andrew J.
96 351, 96115R, H01L 2328
Patent
active
039538770
ABSTRACT:
Described are novel semiconductor structures having a protective passivating layer made from photo- or radiation cross-linking of selected reactive sites of a soluble pre-polymer which is a poly-addition or poly-condensation product of a polyfunctional carbocyclic and/or heterocyclic compound having reactive groups for condensation or addition as well as photoreactive or radiation-reactive groups capable of further polymerization or dimerization. Selected non-cross-linked portions of the passivating layer may be removed by dissolution to form contact points for various useful semiconductor and capacitor components.
REFERENCES:
patent: 3179634 (1965-04-01), Edwards
patent: 3249829 (1966-05-01), Everett et al.
patent: 3332912 (1967-07-01), Rochlitz
patent: 3405224 (1968-10-01), Yawata et al.
patent: 3495996 (1970-02-01), Delaney et al.
patent: 3653959 (1972-04-01), Kehr
patent: 3655543 (1972-04-01), Dijkstra
patent: 3684592 (1972-08-01), Chang et al.
patent: 3694707 (1972-09-01), Nakamura et al.
patent: 3700497 (1972-10-01), Epifano et al.
Sigusch Reiner
Widmann Dietrich
James Andrew J.
Siemens Aktiengesellschaft
LandOfFree
Semiconductors covered by a polymeric heat resistant relief stru does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductors covered by a polymeric heat resistant relief stru, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductors covered by a polymeric heat resistant relief stru will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2006325