High electron mobility transparent conductor

Details High electron mobility transparent conductor High electron mobility transparent conductor

1997-02-10

2000-08-15

Turner, Archene

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

438603, 438761, 4271261, 4271263, G30B 3308

Patent

active

061036048

ABSTRACT:
A transparent electrical conductor which provides relatively high electrical conductivity and transmittance in the visible
ear-infrared (VNIR), relative to known transparent electrical conductors, such as tin-doped indium oxide (ITO). In one embodiment of the invention, the transparent electrical conductor is formed from a plurality of quantum wells formed between the interfaces of three layers of lattice-matched, wide band gap materials, such as AlGaN and GaN. In an alternative embodiment of the invention, a material with a band gap much larger than known materials used for such transparent electrical conductors, such as ITO, is selected. Both embodiments of the invention may be formed on a transparent substrate and provide relatively better transmittance in the VNIR at sheet electrical resistances of four or less ohms/square than known materials, such as tin-doped indium oxide (ITO).

REFERENCES:
patent: 4139858 (1979-02-01), Pankove
patent: 4862471 (1989-08-01), Pankove
patent: 5679152 (1997-10-01), Tischler et al.
Z. Sitar, et al., "AIN/GaN Uperlattices Grown by Gas Source Molecular Beam Epitaxy", 17.sup.th Int'l. Conf. On Metallurgical Coatings & 8.sup.th Int'l. Conf. On Thin Films, San Diego, CA, Apr. 2-6, 1990, pp. 311-320.
R. N. Bhargava, "Blue and UV Light Emitting Diodes and Lasers", Optoelectronics Devices and Technologies, vol. 7, No. 1, pp. 19-47, Jun. 1992.

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