Hard disc drives and read/write heads formed from highly thermal

Dynamic magnetic information storage or retrieval – Record transport with head stationary during transducing – Disk record

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360126, 360135, 423345, G11B 5012, G11B 582, G11B 5147

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active

054651840

ABSTRACT:
Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to <5 .ANG. RMS as measured on a Talystep mechanical profiler and has a thermal conductivity of at least about 300 W/mk. The silicon carbide is particularly suitable for applications where high polishability and thermal conductivity is desired, such as hard disc drives and read/write heads of head-disc assemblies, and also optical apparatus which require a very high polish.

REFERENCES:
Collins et al, J. Appl. Phys., vol. 68, No. 12, Dec. 15, 1990, pp. 6510-6512.
Applications of High Purity SiC Prepared by Chemical Vapor Deposition; Y. Chinone, S. Ezaki, F. Fujita, and K. Matsumoto; Springer Proceedings in Physics, vol. 43; Amorphous and Crystalline Silicon Carbide and Related Materials II; Editors: M. M. Rahman, C. Y. W. Yang; G. L. Harris; .COPYRGT.Springer-Verlag Berlin, Heidelberg 1989.
MUHSIC-COAT Mitsui Ultra High-Purity SiC Coating; (MES; Printed in Japan 92034R3AHA).

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