Microelectronic device package and method

Stock material or miscellaneous articles – Liquid crystal optical display having layer of specified... – With charge transferring layer of specified composition

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385 14, 385 39, 385 47, 385 51, 428 68, 428 70, 428 76, 428413, 428421, 428429, 428435, 428436, 428442, 428447, 428451, 4284735, 428480, 310340, B32B 300

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057027757

ABSTRACT:
A method (38) for packaging a microelectronic device (10) and a device (10) packaged by the method (38). The method (38) includes a step of providing (42) a first material (16) on an active surface of the microelectronic device (10). The first material (16) has a first temperature coefficient of expansion. The method (38) also includes steps of heating (46) the microelectronic device (10) and the first material (16) to a predetermined first temperature and molding (48) a second material (20) about the microelectronic device (10) and the first material (16). The second material (20) has a second temperature coefficient of expansion less than that of the first material (16). A final step of cooling (50) the first material (16), the second material (20) and the microelectronic device (10) provides a packaged microelectronic device (30).

REFERENCES:
patent: 4645551 (1987-02-01), Adams et al.
patent: 5150438 (1992-09-01), Brown
patent: 5294487 (1994-03-01), Ohashi
patent: 5410789 (1995-05-01), Noto et al.
patent: 5593721 (1997-01-01), Daidai
"Deposition Parameter Studies and Surface Acoustic Wave Characterization of PECVD Silicon Nitride Films on Lithium Niobate" by J.H. Hines, D.C. Malocha, Kalpathy B. Sundaram, K.J. Casey and K.R. Lee, IEEE Members, from IEEE Transactions On Ultrasonics, Ferroelectrics, and Frequency Control, vol. 42, No. 3, May 1995.
"Surface Acoustic Wave Characterization of PECVD Films On Gallium Arsenide", by F.S Hickernell and T.S. Hickernell, Fellow, IEEE and Member, IEEE, from IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, vol., 42, No. #, May 1995.

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