Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-09-05

1991-01-01

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

049824090

ABSTRACT:
A semiconductor laser device comprises a substrate formed of elements of the III-V groups and having one conductivity type, a lower clad layer formed on the substrate and having the same conductivity type as that of the substrate, and an upper clad layer formed on the lower clad layer and having a conductivity type opposite to that of the lower clad layer. A waveguide layer having a large refractive index is formed within the lower clad layer by decreasing the band gap of the upper clad layer. The light generated in an activation layer is guided to the lower clad layer, so as to suppress adverse effects which the upper clad layer may have on element characteristics.

REFERENCES:
patent: 4635263 (1987-01-01), Motegi et al.
patent: 4757510 (1988-07-01), Kaneno et al.
Kazumura et al., Feasibility of the LPE Growth of Al.sub.x Ga.sub.y In.sub.1-x-y P on GaAs Substrates, Japanese Journal of Applied Physics, vol. 22, No. 4, Apr. 1983, pp. 654-657.
Hino et al., High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition-Impurity Doping and 590 nm (Orange) Electroluminescence, Japanese Journal of Applied Physics, vol. 23, No. 9, Sep. 1984, pp. 2746-2748.

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