Semiconductor device

Details Semiconductor device Semiconductor device

1988-03-23

1991-01-01

Hille, Rolf

357 39, H01L 2974

Patent

active

049822616

ABSTRACT:
Respective side ends (20s, 1s) of a T.sub.1 electrode (20) and a gate electrode (1) of a TRIAC (70) are mutually adjacent and located on a P.sub.1 layer (13). The side ends (20s, 1s) are connected electrically by a resistance area (13a) which is made of the same material as a semiconductor material used to make the P.sub.1 layer (13). A gate current branches into first and second branch currents (I.sub.GT1, I.sub.GT2). Because the second branch current does not contribute to the turn on of the TRIAC, undesirable (dv/dt) turn on is prevented.

REFERENCES:
patent: 3896477 (1975-07-01), Hutson
patent: 4357621 (1982-11-01), Takeuchi et al.
patent: 4402001 (1983-03-01), Momma et al.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2000470