Gated structure for controlling fluctuations in mesoscopic struc

Details Gated structure for controlling fluctuations in mesoscopic struc Gated structure for controlling fluctuations in mesoscopic struc

1989-01-11

1991-01-01

Prenty, Mark

357 41, 357 15, 357 22, H01L 2701, H01L 2702, H01L 2948, H01L 2980

Patent

active

049822489

ABSTRACT:
A new solid state device based on mesoscopic phenomena is described. A structure of the mesoscopic device includes phase altering scattering sites at various energy levels disposed in proximity to a conductive channel. The carries in the channel, being isolated by a potential barrier, are not in substantial scattering interaction with the phase altering scattering sites in the absence of a sufficiently large voltage at the gate of the mesoscopic device. Increasing the potential at the gate, imposes a localized electric field along the channel, increases the energy levels of the carriers in the channel, and allows the carriers to interact with the phase altering scattering sites, thereby controllably varying the conductance of the channel.

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