Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1989-12-18
1991-01-01
Hudspeth, David
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307443, 307469, 3072962, 36518903, H03K 1710
Patent
active
049821130
ABSTRACT:
For presenting a multipurpose signal pin provided in a semiconductor memory device from undesirable internal leakage current, a signal distributing unit has an inverter circuit responsive to a first external signal of either first and second voltage level for providing the second and first voltage level to a first internal control signal line and a gating circuit operative to block the first external signal but to transfer a second external signal of an extremely high voltage level to a second internal control signal line, and the gating circuit comprises a limiter transistor operative to keep off in the presence of the second external signal but to provide the second voltage level in the presence of the first external signal and a series combination of first and second gating transistors coupled to the multipurpose signal pin and associated with a voltage control circuit for producing gate control signals fed to the first and second gating transistors as well as a back gate biasing signal fed to the second gating transistor, wherein the first and second gating transistors are opposite in channel conductivity type so as to block the second voltage level on the second internal signal line to the multipurpose signal pin.
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patent: 4902917 (1990-02-01), Simpson
patent: 4910710 (1990-03-01), Kobatake
Hudspeth David
NEC Corporation
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