Semiconductor laser having an AlGaInP cladding layer

Details Semiconductor laser having an AlGaInP cladding layer Semiconductor laser having an AlGaInP cladding layer

1993-12-28

1996-12-17

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

H01S 318

Patent

active

055861350

ABSTRACT:
A semiconductor laser includes a GaAs substrate, an active layer made of a semiconductor material having a band gap energy smaller than that of GaAs, and a top clad having an AlGaInP cladding layer. An index antiguiding type semiconductor laser is constituted based on the above structure. The top clad includes a base layer formed on the active layer and a protrusion strip for current injection protruding from the base layer and having an AlGaInP cladding layer. An AlGaInP light diffusion layer with an Al proportion smaller than that of the AlGaInP cladding layer and inclusive of zero is formed on the base layer adjacent to the protrusion strip. The base layer has a thickness so as to allow laser oscillation light to leak out to the light diffusion layer.

REFERENCES:
patent: 4964135 (1990-10-01), Mitsui et al.
patent: 5146466 (1992-09-01), Hamada et al.
patent: 5210767 (1993-05-01), Arimoto et al.
patent: 5222090 (1993-06-01), Serreze
patent: 5274656 (1993-12-01), Yoshida
patent: 5282218 (1994-01-01), Okajima et al.
patent: 5321712 (1994-06-01), Itaya et al.
Kidoguchi et al., I-L characteristics of AlGaInP visible laser diode with lateral leaky waveguide structure, The Autumn Conference of the Japan Society of Applied Physics, Paper No. 18-V-5 1992, (No month), p. 952 * Abstract * .
Mobarhan et al., GainInAs/GaAs/GaInP buried ridge structure single quantum well laser emitting at 0.98 mum, Electronics Letters, vol. 28, No. 16, Jul. 30, 1992, pp. 1510-1511.
Patent Abstracts of Japan, vol. 13, No. 468 (E-834), Oct. 1989, JP-A-01 181 493 (Sharp Corp.).
Yoshida et al., AlGaInP/GaInAs strained quantum well lasers, Electronics Letters, vol. 29, No. 8, Apr. 15, 1993, pp. 654-655.
Wu et al., High Temperature, high power InGaAs Quantum well lasers with lattice matched InGaP Claddings, IEEE Photonics Technology Letters, vol. 4, No. 7, Jul. 1992.
Itaya et al, Remarkable improvment in the temperature characteristics of GaAs lasers using an InGaAlp cladding Layer, Conference Digest, 13th IEEEE International Semiconductor Laser Conference, Sep. 21-25, 1992, pp. 236-237.
Patent Abstracts of Japan, vol. 16, No. 224 (E-1206), May 25, 1992, JP-A-04 039 986 (Fujitsu Ltd.).
Fukagai, et al: "High-Power 1-02 um InGaAs/AIGaAs strained quantum well lasers with GaInP buried wavelength for pumping Pr3.+-.Doped Optical Fibre Amplifier" Electronics Letters Jan. 21, 1993, vol. 29 No. 2.

Affiliated with

Also associated with

Rating

Semiconductor laser having an AlGaInP cladding layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser having an AlGaInP cladding layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser having an AlGaInP cladding layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1998187