Polycrystalline CVD diamond substrate for single crystal epitaxi

Details Polycrystalline CVD diamond substrate for single crystal epitaxi Polycrystalline CVD diamond substrate for single crystal epitaxi

1990-02-13

1991-01-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437100, 437103, 437126, 437974, 148DIG135, 357 81, 427 69, H01L 2100, H01L 2102, H01L 2336, C30B 2904

Patent

active

049818180

ABSTRACT:
The present invention is directed towards the production of a single crystal semiconductor device mounted in intimate contact with a polycrystalline CVD diamond substrate which allows the high heat conductivity of diamond to keep the device cool. This device is made by a method comprising the steps of placing in a reaction chamber, a single crystal of silicon heated to an elevated CVD diamond-forming temperature. A hydrocarbon/hydrogen gaseous mixture is provided within the chamber and is at least partially decomposed to form a polycrystalline CVD diamond layer on said silicon. During the deposition/growth phase, an intermediate layer of single crystal SiC has been found to form between the single crystal of silicon and the polycrystalline CVD diamond layer. In the next step of the process, the silicon is etched or removed to reveal the single crystal SiC supported by the polycrystalline CVD diamond layer. Finally, a semiconductor layer (e.g. silicon, SiC, GaAs, or the like) is grown on the exposed single crystal of SiC to produce a single crystal semiconductor polycrystalline CVD diamond mounted device.

REFERENCES:
Phillips, R., Integrated Semiconductor Structure Arrangement, IBM Tech. Dis. Bull., vol. 8, No. 7, Dec. 1965, p. 1013.
Dyment, J. C., Continuous Operation of GaAs Junction Lasers on Diamond Heat Sinks at 200.degree. K., Appl. Phys. Lett., vol. 11, No. 9, Nov. 1, 1967, pp. 292-294.

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