Method for rapidly thermally processing a semiconductor wafer by

Details Method for rapidly thermally processing a semiconductor wafer by Method for rapidly thermally processing a semiconductor wafer by

1989-03-13

1991-01-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437174, 437247, 437248, 437942, 118620, 219405, 148DIG4, H01L 2100, H01L 2102, H01L 2120, H01L 21263

Patent

active

049818155

ABSTRACT:
A method for rapidly thermal processing a semiconductor wafer (1) by irradiation with electromagnetic radiation which provides that the majority portion of the energy required for heating the semiconductor wafer (1) is transmitted with at least single-sided irradiation of the semiconductor wafter (1) with electromagnetic radiation from a main irradiation arrangement (62) and the intensities (I.sub.M, I.sub.R) of the radiation directed onto the central region (6) and of the radiation directed onto the edge regions (5) are identical. The temperatures in the central region (6) and in the edge regions (5) of the semiconductor wafer (1) are maintained identical during the entire tempering process in order to increase the yield, and an additional electromagnetic radiation is directed onto the edge region (5) of the semiconductor wafer for compensating for the radiation of heat occurring faster at the edge region (5) of the semiconductor wafer (1).
The method improves rapid thermal processing methods in the manufacture of integrated semiconductor circuits.

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