Method of forming a mask pattern for the production of transisto

Details Method of forming a mask pattern for the production of transisto Method of forming a mask pattern for the production of transisto

1988-08-10

1991-01-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437982, 437184, 437912, 437203, 148DIG133, H04L 21265

Patent

active

049818090

ABSTRACT:
A method of making a fine mask pattern suitable for making a compound semiconductor device in which a source and drain regions are formed on both sides of a groove defined in a substrate and both regions are separated from the side walls of the groove by predetermined intervals through a first region with a depth shallower than the groove. A second region is formed between the source and drain region with a depth deeper than said groove. A gate electrode is formed on the surface of the second region in the groove for Schottky contacting with the upper surface of the second region.

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