Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1978-06-06
1980-03-11
Tupman, W. C.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29590, 357 59, B01J 1700
Patent
active
041920597
ABSTRACT:
A process for producing VLSI (very large scale integrated) circuits employs techniques of self-aligned gates and contacts for FET devices and self-aligned contacts for both diffused conducting lines in the substrate and polysilicon conducting lines situated on isolating field oxide formed on the substrate. Mask alignment tolerances are increased and rendered non-critical. The use of materials in successive layers having different oxidation and etch characteristics permits selective oxidation of only desired portions of the structure without need for masking, and removal of selected material from desired locations by batch removal processes again without use of masking. The process and resulting structure affords inherently self-aligned gates and contacts for FET devices and conducting lines. Processing may employ conventional diffusion, oxidation, and etch techniques, although optional high energy ion implant techniques may be employed with simplification and reduction of process steps necessary for conventional diffusion techiques. Direct gate, source, drain, polysilicon line and diffused line contacts are provided. The reduction in size of individual elements and improved interconnection capabilities in accordance with the invention provide VLSI circuits having increased density and reliability.
REFERENCES:
patent: 3475234 (1969-10-01), Kerwin
patent: 3699646 (1972-10-01), Vadasz
patent: 3958323 (1976-05-01), De La Moneda
patent: 4033797 (1977-07-01), Dill
Aghishian Noubar A.
Godejahn, Jr. Gordon C.
Heimbigner Gary L.
Khan Mahboob
Rockwell International Corporation
Tupman W. C.
LandOfFree
Process for and structure of high density VLSI circuits, having does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for and structure of high density VLSI circuits, having , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for and structure of high density VLSI circuits, having will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1994912