Coherent light generators – Particular active media – Semiconductor
Patent
1995-05-19
1997-08-26
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
056617410
ABSTRACT:
A semiconductor light emitting device includes a double heterojunction structure including an active layer, a cladding layer having a first conductivity type, and a cladding layer having a second conductivity type, which cladding layers sandwich the active layer, and an undoped cladding layer interposed between the first conductivity type cladding layer and the active layer, which undoped cladding layer is the same material as the first conductivity type cladding layer and has a thickness larger than the diffusion length of carriers in the undoped cladding layer. Therefore, carriers are accumulated in the undoped cladding layer and then regularly injected into the active layer by Coulomb repulsion between the carriers, resulting in a semiconductor light emitting device with reduced heat generation, reduced fluctuation of emitted laser light, and reduced noise.
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Davie James W.
Mitsubishi Denki & Kabushiki Kaisha
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