Semiconductor memory having built-in self-test circuit

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365201, G06F 1100

Patent

active

056617291

ABSTRACT:
A test pattern generation circuit is stored in a semiconductor memory, a writing operation is carried out with an address sequence pattern and a test data pattern generated with a clock signal obtained from an external part during a test mode, the test data pattern and the read-out data are compared from each other during a reading-out operation, a pass or non-pass discrimination signal in the memory is attained in response to whether both of them are coincided with each other or not, the pass or non-pass discrimination signal is outputted to an external terminal, the number of test signal driving signals is reduced and the number of parallel test chips is increased so as to reduce a test cost. In addition, the memory has a power supply shut-off control circuit and a stable test is carried out by shutting-off the power supply in the case that the power supply shows a short-circuited state.

REFERENCES:
patent: 4752929 (1988-06-01), Kantz et al.
patent: 4768194 (1988-08-01), Fuchs

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