Fabrication method of thin-film transistor

Fishing – trapping – and vermin destroying

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437 41, 437101, 437228, 156652, 156663, 257 53, 257 57, H01L 21336, H01L 2184

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active

053669126

ABSTRACT:
A thin-film transistor comprises a first amorphous semiconductor layer acting as a channel, a second n.sup.+ amorphous semiconductor layer formed on the first amorphous semiconductor layer, a diffusion preventive layer of chromium provided between the second amorphous semiconductor layer and source/drain metal electrodes. The diffusion preventive layer is formed by removing a portion of a diffusion preventive layer forming film not being covered by a patterned resist film using a first etchant. Then, the second amorphous semiconductor layer is formed by removing a portion of a second amorphous semiconductor layer forming film not being covered by the patterned resist film or the diffusion preventive layer using a second etchant which dissolves the second amorphous semiconductor layer forming film but does not dissolve the diffusion preventive layer.

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patent: 4720736 (1988-01-01), Takafuji et al.
patent: 4774207 (1988-09-01), Possin
patent: 4778560 (1988-10-01), Takeda et al.
patent: 4862234 (1989-08-01), Koden
patent: 4885616 (1989-12-01), Ohta

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