Method of manufacture of multi-state mask ROM and multi-state ma

Details Method of manufacture of multi-state mask ROM and multi-state ma Method of manufacture of multi-state mask ROM and multi-state ma

1995-05-25

1996-12-17

Thomas, Tom

Fishing, trapping, and vermin destroying

437 45, 437 48, H01L 218246

Patent

active

055852971

ABSTRACT:
This is a method of manufacturing a multiple state MASK ROM semiconductor device on a P-type semiconductor substrate. The substrate includes an array of parallel buried bit lines oriented in a first direction. The process includes forming a gate oxide layer over the substrate including the buried bit lines; word lines over the gate oxide layer oriented orthogonally to the direction of the array of bit lines. Then form a first patterned implant mask over the device with a first set of openings through the mask. Ion implant dopant of a first dosage level through the openings in the mask to form implant doped regions of a first dosage level in the substrate. Form a second patterned implant mask over the device with a second set of openings through the mask. Then ion implant a dopant of a second dosage level through the openings in the mask to form implanted doped regions of a second dosage level in the substrate, the second dosage level being substantially different from the first dosage level.

REFERENCES:
patent: 4052229 (1977-10-01), Pashley
patent: 4356042 (1982-10-01), Gedaly
patent: 5002896 (1991-03-01), Naruke
patent: 5200355 (1993-04-01), Choi et al.
patent: 5275959 (1994-01-01), Kobayashi
patent: 5278078 (1994-11-01), Kanebako
patent: 5470774 (1995-11-01), Kunitou

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