Pseudomorphic MODFET structure having improved linear power perf

Details Pseudomorphic MODFET structure having improved linear power perf Pseudomorphic MODFET structure having improved linear power perf

1989-12-01

1991-08-06

Hille, Rolf

357 16, 357 4, H01L 2980, H01L 29161, H01L 2712

Patent

active

050381873

ABSTRACT:
A pseudomorphic MODFET structure suitable for microwave frequency large signal applications. This structure is able to improve the transconductance, g.sub.m, at high gate bias and, thus, improve the linear power performance of the MODFET. A modified single quantum well InGaAs channel pseudomorphic MODFET structure replaces the conventional n+ AlGaAs or n+ AlInAs top carrier supply layer with an n+ GaAs carrier supply layer. Much flatter/broader g.sub.m and, hence, f.sub.t and f.sub.max versus gate voltage curves are obtained due to the improved parallel transport in the n+ GaAs layer. Consequently, improved R.sub.1dB and G.sub.1dB are achieved at microwave frequencies, which makes this MODFET structure advantageous for microwave linear power applications.

REFERENCES:
patent: 4967242 (1990-10-01), Sonoda et al.
Chen et al., "DC and RF Characterization of a Planar-Doped Double Hetero Junction MODFET", pp. 581-586.

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