Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-12-01
1997-08-26
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257771, 257773, H01L 2348
Patent
active
056613458
ABSTRACT:
The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film by in-situ annealing, wherein agglomeration of the metal film is started before the metal film reacts with the surface of the substrate due to annealing, while formation of a native oxide on the metal film is suppressed, and whereby the metal film is filled into the groove by annealing at a predetermined temperature for a predetermined period of time. The structure of the semiconductor device includes an insulator in which there is formed a groove portion having a predetermined pattern shape and an electrode interconnection made of a single-crystal metal which is filled in the groove portion.
REFERENCES:
patent: 4352239 (1982-10-01), Pierce
patent: 4847673 (1989-07-01), Matsukawa
patent: 5001541 (1991-03-01), Virkus et al.
patent: 5406123 (1995-04-01), Narayan
patent: 5428251 (1995-06-01), Naito et al.
Hayasaka Nobuo
Kaneko Hisashi
Okano Haruo
Suguro Kyoichi
Wada Jun-ichi
Kabushiki Kaisha Toshiba
Mintel William
Potter Roy
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