Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1978-06-05
1979-04-24
Mack, John H.
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
427 38, 427 39, 427 86, 357 2, C23C 1500
Patent
active
041510585
ABSTRACT:
A method aiming at imparting to the amorphous silicon properties which are compatible with the possibility of modifying by doping or field effect the position of the Fermi level in the volume of the amorphous silicon, a prime requirement for the operation of semiconductor devices. The method comprises a first step of depositing a layer of amorphous silicon onto a substrate under conditions ensuring the purity of the deposit obtained, then a second step wherein the deposit is subjected to a heat treatment consisting in maintaining the deposit in the atmosphere of a plasma containing atomic hydrogen for saturating the existing broken chemical bonds responsible for a parasitic electric conductivity.
REFERENCES:
patent: 3463715 (1969-08-01), Bloom
patent: 3501336 (1970-03-01), Dyer
patent: 4064521 (1977-12-01), Carlson
IBM Technical Disclosure Bulletin, vol. 19, No. 12, May 1977, Brodsky et al., Doping of Sputtered Amorphous Semiconductors.
Comber et al., Electronic Transport and State Distribution in Amorphous SI Films, J. of Non-Crystalline Solids, 11/1972, pp. 219-234.
Kaplan Daniel
Velasco Gonzalo
"Thomson-CSF"
Leader William
Mack John H.
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