Electrophotographic amorphous silicon member

Details Electrophotographic amorphous silicon member Electrophotographic amorphous silicon member

1983-12-19

1984-12-18

Martin, Roland E.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 95, 2525011, 427 74, 357 2, G03G 5082

Patent

active

044891490

ABSTRACT:
The invention disclosed relates to an electrophotographic sensitive member having a photoconductive layer of amorphous silicon. The photoconductive layer is preferably formed by the glow discharge process and includes about 10.sup.-5 to 5.times.10.sup.-2 atomic % of oxygen, about 10 to 40 atomic % of hydrogen and about 10 to 20000 ppm of a Group IIIb impurity of the Periodic Table. A barrier layer of amorphous silicon having a thickness of about 0.2 to 5 microns and containing about 0.05 to 1 atomic % of oxygen may also be formed between a substrate and said photoconductive layer.

REFERENCES:
patent: 4147667 (1979-04-01), Chevallier et al.
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4225222 (1980-09-01), Kempter
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4265991 (1981-05-01), Hirai et al.
"Electronic Properties of Substitutionally Doped Amorphous Si and Ge", Spear et al., Phil. Mag., vol. 33, No. 6, (1976), pp. 935-949.
"Amorphous Si-H-Fl-O Alloys", Feldman, Jour. Non-Cryst. Solids, 35 and 36, pp. 309-312, (1980).

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