Plasma processing apparatus including an electromagnet with a bi

Electric heating – Metal heating – By arc

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Details

2191214, 156646, 20429817, 20429837, B23K 900, C23C 1434

Patent

active

050380133

ABSTRACT:
A plasma etching apparatus comprises a chamber, a holding table for holding samples, such as a semiconductor substrate to be etched, in the chamber, a plasma-generating device for generating a plasma within the chamber, and a magnetic-field-forming device which forms a magnetic field perpendicular to the surface of the sample placed on the holding table and parallel the inner wall of the chamber.

REFERENCES:
patent: 4761219 (1988-08-01), Sasaki et al.
patent: 4826585 (1989-05-01), Davis
patent: 4911814 (1990-03-01), Matsuoka et al.
Deposition of Co-Cr Films by Perpendicular Magnetic Recording Kadokura et al., vol. MAG-17, No. 6, pp. 3175-3177.

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