Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate
Patent
1995-07-24
1997-08-26
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of substrate or post-treatment of coated substrate
427533, 427535, 4272551, 4272552, 4272557, C23C 1656
Patent
active
056611153
ABSTRACT:
A chemical vapor deposition method of providing a layer of material atop a semiconductor wafer using an organic precursor includes, a) positioning a wafer within a chemical vapor deposition reactor; b) injecting an organic precursor to within the reactor having the wafer positioned therein, and maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer of material onto the wafer which incorporates carbon from the organic precursor; and c) after depositing the first layer, ceasing to inject the organic precursor into the reactor and injecting a component gas into the reactor and generating a plasma within the reactor against the first layer, the component gas and plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited first layer to remove carbon from the first layer and produce gaseous products which are expelled from the reactor. In one aspect, the component gas provides a bonding component which replaces and substitutes for the carbon displaced from carbide present in the layer. In another aspect, the "b" and "c" steps are repeated to deposit more of the same layers.
REFERENCES:
patent: 4558509 (1985-12-01), Tiwari
patent: 4568565 (1986-02-01), Gupta et al.
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5139825 (1992-08-01), Gordon et al.
patent: 5300321 (1994-04-01), Nakano et al.
patent: 5320878 (1994-06-01), Maya
patent: 5399379 (1995-03-01), Sandhu
patent: 5403620 (1995-04-01), Kaesz et al.
Conrad, J.R. et al., "Ion Beam Assisted Coating And Surface Modification with Plasma Source Ion Implantation", J. Vac. Sci. Technol. A 8 (4), Jul/Aug, 1990, 3146-3151.
Niemer, Burkhard et al., "Organometallic Chemical Vapor Deposition Of Tungsten Metal, And Suppression Of Carbon Incorporation By Codeposition Of Platinum", University of California, Dept. of Chemistry and Biochemistry, May, 1992.
Watanabe et al., "Stacked Capacitor Cells for High-Density Dynamic RAM's", IED 1988 pp. 600-603.
Morihara et al., "Disk-Shaped Stacked Capacitor Cell For 256 Mb Dynamic Random-Access Memory", Aug. 19, 1994, Jpn. J. Appl. Phys. vol. 33 (1994), Pt. 1, No. 8, pp. 14-19.
Woo et al., "Selective Etching Technology of in-situ P. Doped Poly-Si (SEDOP) for High Density DRAM Capacitors", 1994 Symposium on VLSI Technology of Technical Papers, pp. 25-26.
King Roy V.
Micro)n Technology, Inc.
LandOfFree
Method of reducing carbon incorporation into films produced by c does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of reducing carbon incorporation into films produced by c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of reducing carbon incorporation into films produced by c will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1988509