Charge detection device, a method for producing the same, and a

Details Charge detection device, a method for producing the same, and a Charge detection device, a method for producing the same, and a

1994-08-02

1995-11-07

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257218, 257224, 377 60, H01L 29796, G11C 1928

Patent

active

054649978

ABSTRACT:
A charge detection device for converting a signal charge consisting of carriers of a first polarity externally provided into a voltage signals, the charge detection device comprising a MOS transistor, the MOS transistor including: a first semiconductor layer having a transistor channel for carriers of a second polarity; an insulating layer provided on the first semiconductor layer; and a gate electrode provided on the insulating layer, wherein transistor characteristics of the MOS transistor are changed by the signal charge accumulated in a surface region the first semiconductor layer immediately below in interface between the first semiconductor layer and the insulating layer, thereby detecting a quantity of the signal charge.

REFERENCES:
patent: 4074302 (1978-02-01), Brewer
patent: 4672645 (1987-06-01), Bluzer
patent: 4984045 (1991-01-01), Matsunaga
patent: 5223725 (1993-06-01), Miwada
patent: 5229630 (1993-07-01), Hamasaki
patent: 5357128 (1994-10-01), Shinji
Carlo Sequin et al., Charge Transfer Devices, pp. 97-116, (Academic Press, New York, 1975).
R. J. Brewer, "A Low Noise CCD Output Amplifier," in 1978 International Electron Devices Meeting Technical Digest, pp. 610-612, Dec. 1978.
M. Morimoto et al. "Low Noise Ring-Junction-Gate Amplifier for CCD Signal Charge Detection," 1978 Convention Record of the Institute of Television Engineers of Japan, Jul. 1989.
Y. Matsunaga, "High Sensitivity Charge Detectors for Charge Coupled Devices," in Institute of Television Engineers Technical Report, vol. 13, No. 64, pp. 21-24, IPU '89-30, Dec. '89 23.

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