Electric lamp and discharge devices – With luminescent solid or liquid material – Solid-state type
Patent
1975-09-25
1977-05-10
Rolinec, Rudolph V.
Electric lamp and discharge devices
With luminescent solid or liquid material
Solid-state type
357 16, H01J 162, H01L 29161
Patent
active
040230627
ABSTRACT:
A body of single crystalline semiconductor material has a first region of one conductivity type spaced from a second region of an opposite conductivity type with a third region between and contiguous to each of the first and second regions. The junctions between the third and each of the first and second regions are heterojunctions. At the peak emission wavelength of the third region the index of refraction of each of the first and second regions is at least 3% less than the index of refraction of the third region. Furthermore, each of the first and second regions has an energy band gap greater than that of the third region, with the difference in the energy band gap being greater than 0.1 eV. The thickness of the third region between heterojunctions is less than 0.125 microns. The difference in index of refraction and band gap energy at the heterojunctions and the thickness of the third region, as stated, provides a waveguide for light generated in the third region which results in the emission of light of a low beam divergence.
REFERENCES:
patent: 3582573 (1971-06-01), Miller
patent: 3667007 (1972-05-01), Kressel et al.
patent: 3677836 (1972-07-01), Lorenz
patent: 3758875 (1973-09-01), Hayashi
patent: 3911376 (1975-10-01), Thompson
"A GaAs-Al.sub.x Ga.sub.1-x As Double Hetero-Structure Planar Stripe Laser" Yonezu et al., Japanese Journal of Appl. Phys., vol. 12, No. 10, Oct. 1973.
"Threshold Current Density and Lasing Traverse Mode in a GaAs-Al.sub.x Ga.sub.1-x As Double Hetrojunction Laser", Yonezu et al., Japanese Journal of Appl. Phys., vol. 12, No. 10, Oct. 1973, pp. 1593.
"Characteristics of the Junction-Strine-Geometry GaAs-GaAlAs Double Heterojunction Laser", Namizaki et al., Japanese Journal of Appl. Physics, vol. 13, No. 10, Oct. 1974, p. 1618.
Ettenberg Michael
Kressel Henry
Bruestle Glenn H.
Calder Daniel N.
RCA Corporation
Rolinec Rudolph V.
Sunderdick Vincent J.
LandOfFree
Low beam divergence light emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low beam divergence light emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low beam divergence light emitting diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1985454