Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means
Patent
1993-07-02
2000-10-03
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular power supply distribution means
257296, H01L 2978, H01L 3300
Patent
active
061276960
ABSTRACT:
High voltage MOS transistors are fabricated contemporaneously with scaled flash EEPROM array transistors. Active silicon regions separated by field oxide isolation structures are formed as in the prior art. A sacrificial thermal oxide layer simultaneously removes Kooi effect residual nitridization and provides gate oxide for the high voltage transistors of a thickness commensurate with the high voltage application. The sacrificial oxide is thereafter removed from all circuit areas except over high voltage device active areas. Growth of tunnel oxide, first polysilicon, interpoly dielectric, peripheral gate oxide and second polysilicon layers as well as patterning of the layers are accomplished in a known manner. The second polysilicon layer is patterned to create lines which lie within lines formed of the first polysilicon layer, the second polysilicon layer aiding controlling the final channel length of the high voltage devices. A uni-sided lightly doped drain structure is created in n-channel enhancement and intrinsic high voltage devices only by an appropriately shaped mask to block the n+ source-drain implant over a previously implanted tip region disposed between the gate and drain, thereby minimizing hot-carrier effects in the drains. Metallization for the high voltage transistors is made over field oxide to the polysilicon control gates formed from the first polysilicon layer.
REFERENCES:
patent: 3970486 (1976-07-01), Kooi
patent: 4128439 (1978-12-01), Jambetkar
patent: 4401691 (1983-08-01), Young
patent: 4663645 (1987-05-01), Komori et al.
patent: 4764248 (1988-08-01), Bhattacherjee et al.
patent: 4814286 (1989-03-01), Tam
patent: 5034798 (1991-07-01), Oshima
patent: 5057448 (1991-10-01), Kuroda
patent: 5061654 (1991-10-01), Shimizu et al.
patent: 5075246 (1991-12-01), Re et al.
patent: 5077230 (1991-12-01), Woo et al.
patent: 5134452 (1992-07-01), Yamaguchi et al.
patent: 5156991 (1992-10-01), Gill et al.
patent: 5242848 (1993-09-01), Yeh
patent: 5252505 (1993-10-01), Yatsuda et al.
patent: 5254489 (1993-10-01), Nakata
patent: 5291043 (1994-03-01), Arakawa
patent: 5352620 (1994-10-01), Komori et al.
Sery George E.
Smudski Jan A.
Intel Corporation
Meier Stephen D.
LandOfFree
High voltage MOS transistor for flash EEPROM applications having does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage MOS transistor for flash EEPROM applications having, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage MOS transistor for flash EEPROM applications having will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-198329