Method of making an integrated circuit bipolar memory cell

Details Method of making an integrated circuit bipolar memory cell Method of making an integrated circuit bipolar memory cell

1981-10-27

1984-12-18

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576C, 29578, 148187, 148188, H01L 21225

Patent

active

044883501

ABSTRACT:
A static bipolar random access memory cell includes first and second transistors formed in epitaxial silicon pockets 41 and 42 in a substrate. The collectors 19 and 19' and bases 15 and 15' of the transistors are interconnected with polycrystalline silicon 21 doped to match the conductivity types of the regions contacted. Undesired PN junctions 40 and 40' created thereby are shorted using an overlying layer of a metal silicide 25. In a region overlying the N conductivity type polycrystalline silicon 23 or 23', the metal silicide is removed and a PN junction 37 or 37' created by depositing P conductivity type polycrystalline silicon 35c or 35c'. If desired additional P type polycrystalline silicon 35a and 35b may be deposited across the surface of the epitaxial layer where the base regions of the two transistors are formed to reduce the base series resistance.

REFERENCES:
patent: 4076556 (1978-02-01), Agraz-Guerena et al.
patent: 4344223 (1982-08-01), Bulger et al.
patent: 4369565 (1983-01-01), Muramatsu
patent: 4398338 (1983-08-01), Tickle et al.
patent: 4403399 (1983-09-01), Taylor
patent: 4408388 (1983-10-01), Kameyama
patent: 4418468 (1983-12-01), Vora et al.
Okada et al., "PSA-A New Approach for Bipolar LSI", IEEE J. of Solid-State Circuits, vol. SC-13, No. 5, Oct. 1978, pp. 693-697.

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