Fishing – trapping – and vermin destroying
Patent
1991-04-30
1993-05-04
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437126, 437128, 437 31, 437133, H01L 2120
Patent
active
052081842
ABSTRACT:
Generally, and in one form of the invention, a p-n junction diffusion barrier is disclosed comprising a first semiconductor layer 28 of p-type conductivity, a second semiconductor layer 32 of n-type conductivity and a third semiconductor layer 30 of p-type conductivity disposed between the first and second layers, the third layer being doped with a relatively low diffusivity dopant in order to form a diffusion barrier between the first and the second semiconductor layers.
Other devices, systems and methods are also disclosed.
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Stanchina et al.; "Improved High Frequency Performance of AlInAs/GaInAs HBTs Through Use of Low Temperature GaInAs"; Second International Conference, Indium Phosphide and Related Materials; IEEE, 1990, pp. 13-16.
Malik et al.; "High-Gain, High-Frequency AlGasA/GaAs Graded Band-Gap Base Bipolar Transistors with a Be Diffusion Setback Layer in the Base"; Appl. Phys. Lett 46(6), Mar. 15, 1985, pp. 600-602.
T. H. Chiu, et al., Chemical Beam Epitaxial Growth of Strained Carbon-Doped GaAs, pp. 171-173, Appl. Phys. Lett. 57 (2), 9 Jul. 1990.
Cole Troy J.
Dang Trung
Donaldson Richard L.
Hearn Brian E.
Kesterson James C.
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