Semiconductor device having I.sup.2 L gate with heterojunction

Details Semiconductor device having I.sup.2 L gate with heterojunction Semiconductor device having I.sup.2 L gate with heterojunction

1993-01-22

1994-05-24

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257, 257, 257

Patent

active

053151356

ABSTRACT:
In a semiconductor device having I.sup.2 L gate, on a first conducting type semiconductor layer, a first semiconductor region with a second conducting type and a wider band gap than that of the semiconductor layer and a second semiconductor region with a second conducting type and a narrower band gap than that of the semiconductor layer are formed, and on the second semiconductor region, a third semiconductor region with the first conducting type is formed.

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