Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-04-30
1994-05-24
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 21, 257 22, 257458, H01L 2714
Patent
active
053151283
ABSTRACT:
Described is a resonant-cavity p-i-n photodetector based on the reflection or transmission through a Fabry-Perot cavity incorporating non-epitaxial, amorphous layers with alternating refractive index difference which layers are electron-beam deposited on a light-gathering side of a commercially available photodetector. The materials of the Fabry-Perot cavity are selectable from materials, refractive indices of which fall within a large range (from n=1.26 for CaF.sub.2 to n=3.5 for Si) preferably from materials which are depositable in an amorphous state. The material combinations are selected so that only wavelengths resonant with the cavity mode will be detected. The microcavity of the RC-PIN design can also be deposited on any existing detector structure, without modification of semiconductor growth. Such a photodetector would be useful for wavelength de-multiplexing applications. The ease of layer deposition, as well as the high degree of tailorability of spectral position, spectral detection width, and maximum numerical aperture of efficient detection, make the RC-PIN attractive for use in wavelength demultiplexing applications. An exemplary RC-PIN photodetector includes a Si/SiO.sub.2 Fabry-Perot cavity electron-beam deposited on the InP substrate of a commercial InGaAs photodetector. The detection efficiency relative to a reference device was 52 percent at the resonant wavelength of 1350 nm, with a resonance width of 14 nm, and a 4 percent response for off-resonance wavelengths in the 1100-1700 nm range.
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Hunt Neil E. J.
Schubert Erdmann F.
Zydzik George J.
Alber Oleg E.
AT&T Bell Laboratories
Mintel William
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