Phase shifting reticle fabrication using ion implantation

Details Phase shifting reticle fabrication using ion implantation Phase shifting reticle fabrication using ion implantation

1991-07-30

1993-05-04

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, 430311, 430396, G03F 900

Patent

active

052081257

ABSTRACT:
A method of fabricating a phase shifting reticle that can be used as a mask in photolithographic processes such as semiconductor wafer patterning. A transparent quartz substrate is subjected to high voltage ion bombardment to produce patterns of ion implant areas on the substrate. By carefully selecting the dopants for ion implantation and closely controlling the implantation process, areas on the substrate are produced having an absorption property for forming an opaque light blocking area or indexes of refraction different than the quartz substrate and selected to achieve a 0.degree. to 180.degree. phase shift area. This produces a repetitive pattern of alternating light transmission openings and phase shifters having opaque light blockers on either side. Additionally, tapered phase shifters may be implanted into the substrate to extend from a 180.degree. phase shift area into a light transmission opening at a 0.degree. phase shift.

REFERENCES:
patent: 4686162 (1987-08-01), Stangl et al.
patent: 5045417 (1991-09-01), Okamoto
Nitayama et al. "New Phase Shifting Mask with Self-Aligned Phase Shifters for a Quarter Micron Photolithography" pp. 3.3.1-3.3.4.
Fujitzu "SiO.sub.2 Sputter and Lift-Off".
Isamu Hanyu et al. "New Phase-Shifting Mask with Highly Transparent SiO.sub.2 Phase Shifters" pp. 167-177.

Affiliated with

Also associated with

Rating

Phase shifting reticle fabrication using ion implantation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase shifting reticle fabrication using ion implantation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase shifting reticle fabrication using ion implantation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1974518