Vertical cavity surface emitting laser with laterally integrated

Details Vertical cavity surface emitting laser with laterally integrated Vertical cavity surface emitting laser with laterally integrated

1996-07-01

1998-05-26

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 29, 372 96, H01S 319, H01S 313, H01S 308

Patent

active

057578362

ABSTRACT:
A vertical cavity surface emitting laser (VCSEL) having a first and a second mirror stack and an active region is formed utilizing epitaxial layer growth techniques. A lateral photodetector is integrally formed in the epitaxial growth layers, thereby providing for a VCSEL with laterally integrated photodetector. An isolation region is formed in the epitaxial growth layers between the VCSEL and the photodetector thereby isolating the VCSEL and the lateral photodetector. The integrated VCSEL and lateral photodetector capable of monitoring reflected laser emission, thus laser power output of the VCSEL and employing feedback to maintain a specific laser power output level, thereby capable of automatic power control (APC).

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patent: 5663944 (1997-09-01), Mun
Neamen, Donald, Semiconductor Physics and Devices:Basic Principles, Illinois: Irwin, 1992, p. 628.

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