Method of making a semiconductor device having buried doped and

Details Method of making a semiconductor device having buried doped and Method of making a semiconductor device having buried doped and

1995-05-11

1996-11-26

Fourson, George

Fishing, trapping, and vermin destroying

437 26, 437 11, H01L 21265

Patent

active

055785077

ABSTRACT:
A semiconductor device includes a buried impurity layer formed at a predetermined depth from a main surface of a semiconductor substrate by utilizing ion injection of a conductivity type determining element, and a gettering layer formed in a position adjacent to and not shallower than the buried impurity layer by utilizing ion injection of an element other than a conductivity type determining element.

REFERENCES:
patent: 3622382 (1971-11-01), Brack
patent: 3961355 (1976-06-01), Abbas et al.
patent: 4053925 (1977-10-01), Burr et al.
patent: 4056408 (1977-11-01), Bartko
patent: 4317686 (1982-03-01), Anand et al.
patent: 4509990 (1985-04-01), Vasudev
patent: 4712123 (1987-12-01), Miyatake et al.
patent: 4885257 (1989-12-01), Matsushita
patent: 4887135 (1989-12-01), Cheney et al.
patent: 4923820 (1990-05-01), Beasom
patent: 4931405 (1990-06-01), Kamijo et al.
patent: 4948742 (1990-08-01), Nishimura et al.
patent: 4962051 (1990-10-01), Liaw
patent: 5075751 (1991-12-01), Tomii et al.
patent: 5098852 (1992-03-01), Niki et al.
patent: 5250445 (1993-10-01), Beam et al.
patent: 5279978 (1994-01-01), See et al.
patent: 5389563 (1995-02-01), Kuroi et al.
patent: 5426062 (1995-06-01), Hwang
"Proximity Gettering with Mega-Electron-Volt Carbon and Oxygen Implantations" by H. Wong et al., Applied Physics Letter, 52(12), Mar. 21, 1988, pp. 1023-1025.
D. Pramanik and M. Currens "MeV Implantation for Silicon Device Fabrication," Solid State Technology, (May 1984), pp. 211-216.
Kamins et al., "Heavy metal gettering on silicon-on-insulator structures formed by oxygen implantation into silicon", J. Appl. Phys. 58(7), 1 Oct. 1985, pp. 2559-2563.
J. B. Dinklage et al., "Gettering by Ion Implantation," IBM Technical Disclosure Bulletin, vol. 19, No. 11, (Apr. 1977), p. 4091.
K. E. Bean et al., "Germanium Doped Silicon Misfit Dislocation Gettering and Strin Layer Superlattice Structures Via Conventional CVD Epitaxy", Electrochemical Society, vol. 8-1 (May 1988), pp. 1-22.

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