Method for determination of resistivity of N-type silicon epitax

Fishing – trapping – and vermin destroying

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437238, 437937, 148DIG146, H01L 2166

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055785042

ABSTRACT:
A method for the determination of the resistivity of an n-type epitaxial layer formed on a silicon substrate is disclosed. This invention resides in either directly determining the true resistivity of a sample by preparing this sample without a natural oxide film which is responsible for the change with the passage of time or indirectly determining the true resistivity of a sample by intentionally forming on the sample a natural oxide film so stable to defy the change with the passage of time and measuring resistivity of this sample.

REFERENCES:
patent: 4992301 (1991-02-01), Shishiguchi et al.
patent: 5365877 (1994-11-01), Kubota

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