Patent
1991-04-10
1992-09-29
Hille, Rolf
357 43, 357 42, H01L 2972, H01L 2702
Patent
active
051517655
ABSTRACT:
A semiconductor device having a submicron miniaturization level structure comprises a first high-current bipolar transistor having a first wide emitter width and a second high-speed bipolar transistor having a narrow emitter width relatively to the first emitter width, which transistors are formed in a second common semiconductor substrate. According to a first embodiment, the base region of the first transistor is thicker than that of the second transistor, and thus a suitable h.sub.Fe balance is maintained; and according to another embodiment, the first, base region of the first transistor has a higher impurity concentration than the second base region of the second transistor and has the same depth as that of the second base region, so that a suitable h.sub.FE balance is maintained.
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Fujitsu Limited
Hille Rolf
Saadat Mahshid
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