Method of manufacturing GaAs metal semiconductor field effect tr

Details Method of manufacturing GaAs metal semiconductor field effect tr Method of manufacturing GaAs metal semiconductor field effect tr

1992-12-23

1994-05-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 22, 437161, 437184, 437912, H01L 21265

Patent

active

053148339

ABSTRACT:
A method of manufacturing a GaAs field effect transistor comprises depositing a silicon thin film 202 on a semi-insulating semiconductor substrate 201, forming a first sensitive film 203 by a photolithography to define channel areas and ion-implanting n-type dopants into the substrate to form an activation layer, removing the first sensitive film, forming a second sensitive film 203a on the silicon thin film by photolithography to define an ohmic contact area and then forming a highly doped impurity layer on the side of the activation layer by way of an ion-implantation process, depositing a passivation film 206 over the entire surface of the substrate 201 after the removal of the sensitive film, and effecting an annealing or heat treatment, forming a third sensitive film of a predetermined pattern by using an ohmic contact forming mask, effecting a recess etching process to the surface of the substrate and forming an ohmic contact on the etched portion, and patterning a gate region by using the gate forming mask, recess-etching the surface of the substrate and depositing a low resistivity metal to form a gate.

REFERENCES:
patent: 4298403 (1981-11-01), Davey et al.
patent: 4656076 (1987-04-01), Vetanen et al.
patent: 4728621 (1988-03-01), Graf et al.
patent: 4732871 (1988-03-01), Buchmann et al.
patent: 4849368 (1989-07-01), Yamashita et al.
patent: 4929567 (1990-05-01), Park et al.
patent: 5073512 (1991-12-01), Yoshino

Affiliated with

Also associated with

Rating

Method of manufacturing GaAs metal semiconductor field effect tr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing GaAs metal semiconductor field effect tr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing GaAs metal semiconductor field effect tr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1972409